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The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ
Michel Houssa Laboratoire Materiaux et Microelectronique de Provence, Universite de Provence, France Silicon Processing and Device Technology Division, IMEC, Belgium
IntroductionThe need for high-k gate dielectrics and materials requirementDeposition techniquesALCVD, MOCVD, PLD, MBECharacterizationPhysico-chemical characterizationX-ray and electron spectroscopiesOxygen diffusion and thermal stabilityDefect characterization by ESRBand alignment determined by photo-injectionElectrical characteristicsTheory of defects in high-k materialsBonding constraints and defect formation at Si/high-k interfacesBand alignment calculationsElectron mobility at the Si/high-k interfaceModel for defect generation during electrical stressTechnological aspectsDevice integration issuesDevice concepts for sub-100 nm CMOS technologiesTransistor characteristicsNonvolatile memories based on high-k ferroelectric layers
