Single Chamber Processing

Single chamber processing has attracted the attention of a number of researchers as well as industries as an alternative processing "philosophy" to complement or even replace the stringent environment of micro- and optoelectronics device fabrication. Up till now single chamber processing has been an elusive manufacturing objective throughout the history of integrated circuit technology. With the emergence of integrated processing tools in recent years, significant segments for continuous fabrication processes have been successfully realised and their potential has already innovated the industry. The 14 papers in this volume cover topics such as: The background of this approach and up-dated status; Design and concepts of relevant cluster tools equipment; Specific process modules such as deposition chambers (CVD, RTCVD, UVCVD, ...) annealing or etching reactors; and Standardization efforts. The work will provide both a stimulus for future research in this field, as well as useful reference material on the new technology trends in microelectronic device manufacturing technology.

Implementation of gate stack integrated process through a cluster tool concept (A. Kermani et al.). Integrated processing tools for electronic materials (A.K. Sinha). Single wafer integrated processes by RT-LPMOCVD modules - Application in the manufacturing of InP-based laser devices (A. Katz, S.J. Pearton). Thin dielectric films integrated manufacturing on III-V materials: Plasma cleaning and light assisted chemical vapour deposition (O. Dulac, Y.I. Nissim). In-process control of silicide formation during rapid thermal processing (J.M. Dilhac et al.). Poly-emitter fabrication in a single vertical reactor clustered with HF vapor etching (M. Hendriks et al.). Low temperature in-situ cleaning of silicon wafers with an ultra high vacuum compatible plasma source (J. Ramm et al.). Radial control of the physical properties of RT-LPCVD polysilicon films deposited in a cylindrical cold wall reactor (B. Semmache et al.). In-situ process integration of polysilicon emitter stacks by rapid thermal multi-processing (I. Barsoni et al.). In-situ ellipsometry for real-time feedback control of oxidation furnaces (C. Schneider et al.). Critical issues for single-chamber manufacturing: The role of laser technology (D.J. Ehrlich). Fabrication and characterization of selectively grown Si1-xGex/Sip+/N heterojunctions using pulsed laser induced epitaxy and gas immersion laser doping (K.J. Kramer et al.). UV assisted oxydation of SiGe strained layers (V. Craciun et al.). A novel VUV photochemical deposition apparatus (C. Manfredotti et al.).