Topics in Millimeter Wave Technology

Topics in Millimeter Wave Technology is a compendium of papers dealing with plasma waves, TUNNETT diodes, and solid-state devices. One paper describes the application of the TUNNET diode, a semiconductor with a coherent signal source of over 100 GHz to 1000 GHz. The paper notes the possibility of achieving more than 1000 GHz through sophisticated device fabrication technology. Another paper discusses the use of computer-aided testing of superconductor-insulator-superconductor (SIS) junction whose mixing properties are effected by the ski-sloped shape of the current-voltage curve. Such testing methods are useful at fixed or variable temperatures from 15 K to 300 K. One paper reviews the collective Thomson scattering theory, including the application of the multichannel far-infrared scattering system in the basic tokamak plasma physics. Another paper discusses the static induction transistor for very high frequency operation as the millimeter to submillimeter wave region is the ideal static induction transistor in ballistic devices. This review material can be helpful for nuclear scientists, nuclear engineers, students of physics, and researchers involved in plasma physics and semiconductor technology.

List of ContributionsChapter 1 The CW GaAs Tunnett Diodes I. Introduction II. Theory of TUNNETT Diode III. Preparation of the GaAs Hyperabrupt p+-n+-i(v)-n+ Diode IV. Experimental Results V. Features of the GaAs Hyperabrupt p+-n+-i-n+ TUNNETT Diodes VI. Future of the TUNNETT Diode VII. Conclusion ReferencesChapter 2 Computer-Aided Testing of SIS Junctions and Solid-State Devices I. Introduction II. Nonlinearities in SIS Junctions, Schottky Diodes and FETs III. Description of Test System IV. Software V. Measurements VI. Conclusions References Appendix A Appendix B Appendix C Appendix DChapter 3 Multichannel Far-Infrared Collective Scattering System for Plasma Wave Studies I. Introduction II. Review of Collective Thomson Scattering Theory III. Far-Infrared Probe Source IV. Optical Scattering System V. Mixers, Amplifiers, and Data Acquisition VI. Calibration of Optical System VII. Typical Scattering Data VIII. Other Applications IX. Acknowledgments X. ReferencesChapter 4 Special Imperfections in Semiconductors I. Introduction II. Electron Scattering by Dislocations III. Natural Quantum Wells in ZnSe IV. Deep Level Defects in Semi-Insulating GaAs V. Concluding Remarks Acknowledgments ReferencesChapter 5 SIT as a Ballistic Device I. Introduction II. SIT III. Ideal SIT IV. Ideal SITT V. Conclusion ReferencesIndex