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This second part presents a comprehensive overview of fundamental optical properties of the III Nitride Semiconductor. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the second of a two part Volume in the seriesOptoelectronic Properties of Semiconductors and Superlattices.
Hongxing Jiang is a Professor in the Department of Physics, Kansas State University, Manhattan, Kansas. Omar Manasreh, is a Professor in the Department of Electrical & Computer Engineering, at The University of New Mexico, Albuquerque, New Mexico. He is also the editor of the Optoelectronic Properties ofSemiconductors and Superlattices series.
Chapter One: Optical Spectroscopy of Highly Excited Group III-Nitrides Chapter Two: Optical Constraints of III-Nitrides-Experiments Chapter Three: Optical Functions of III-Nitrides-Calculations Chapter Four: Interband Optical Transitions in Piezo-Strained InGaN Qunatum Wells Chapter Five: Electric Fields in Polarized InGaN/GaN Heterostructures Chapter Six: Inter-link Between Structural and Optical Properties of GaN and GaN/AIGaN Heterostructures Chapter Seven: LO Phonon Assisted Excition Luminescence Processes in Heteroepitaxial GaN Films Chapter Eight: Cubic Phase GaN and AIGaN: Expitaxial Growth and Optical Properties
