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The first part of a comprehensive overview of fundamental optical properties of III-nitride semiconductors. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the first of a two part Volume in the series Optoelectronic Properties of Semiconductors and Superlattices.
Hongxing Jiang is a Professor in the Department of Physics, Kansas State University, Manhattan, Kansas. Omar Manasreh, is a Professor in the Department of Electrical & Computer Engineering, at The University of New Mexico, Albuquerque, New Mexico. He is also the editor for the series Optoelectronic Propertiesof Semiconductors and Superlattices.
Introduction Chapter One: Time-resolved Photoluminescence Studies of III-Nitrides Chapter Two: Time-resolved Raman Studies of Wide bandgap Wurtzite GaN Chapter Three: Optical Properties of InGaN Based III-Nitride Heterostructures Chapter Four: Optical Properties of Homeopitaxial GaN Chapter Five: Physics and Optical Properties of GaN/InGaN Quantum Wells Chapter Six: Characterization of GaN and Related Alloys by Raman Scattering Chapter Seven: Raman Studies of Wurtzite GaN and Related Compounds Chapter Eight: Light Emission from Rare Earth Doped GaN
