Novel Compound Semiconductor Nanowires

One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D-2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.

Fumitaro Ishikawa received his bachelor's degree in 1999 and his PhD in electronics engineering in 2004 from Hokkaido University, Sapporo. In 2004 he joined Paul Drude Institute für Festkörperelektronik, Berlin. In 2007 he became assistant professor in Osaka University. Since 2013, he is associate professor in Ehime University. He has worked on molecular beam epitaxy of compound semiconductors throughout his career. His current research interests mainly focus on the synthesis of advanced materials based on compound semiconductor nanostructures. Irina A. Buyanova received her BSc degree in physics in 1982 from Kiev State University and her PhD in solid state physics in 1987 from the Institute for Semiconductors, Ukrainian Academy of Sciences, Kiev. In 1994 she joined the Department of Physics, Chemistry and Biology, Linköping University, Sweden. In 2002 she was awarded a senior researcher grant of excellence from the Swedish Research Council, followed by a professorship at Linköping University in 2007. Her current research interests mainly focus on physics and applications of novel spintronic materials, advanced electronic and photonic materials based on wide-bandgap semiconductors, and highly mismatched semiconductors and related nanostructures.

Epitaxial Heterostructure Nanowires. Molecular beam epitaxial growth of GaN nanocolumns and related nanocolumn emitters. Novel GaNP nanowires for advanced optoelectronics and photonics. GaNAs-based nanowires for near-infrared optoelectronics. Dilute Bismide Nanowires. Ferromagnetic MnAs/III-V Hybrid Nanowires for Spintronics. GaAs-Fe3Si Semiconductor-Ferromagnet Core-Shell Nanowires for Spintronics. GaAs/AlGaOx Heterostructured Nanowires Synthesized by Post Growth Wet Oxidation. GaAs/SrTiO3 Core-Shell Nanowires. Ga(In)N nanowires grown by Molecular Beam Epitaxy: from quantum light emitters to nano-transistors. InP-related nanowires for light-emitting applications. InP/InAs quantum heterostructure nanowires. III-Nitride Nanowires and Their Laser, LED photovoltaic Applications. III-V nanowires: transistor and photovoltaic applications.